SSM3J108TU Datasheet, PDF (3/5 Pages) Toshiba Semiconductor – Field Effect Transistor Silicon P-Channel MOS Type High Speed Switching Applications

SSM3J108TU
ID - VDS
-5
-10 -4.0
-4
-3
-2.5
-2
-1
-0
-0.0
-1.8
-1.5 _{Common Source}
VGS=-1.2V ^Ta=25°C
-0.2 -0.4 -0.6 -0.8 -1.0
Drain-Source voltage VDS (V)
RDS(ON) - VGS
300
Common Source
Ta=25°C
250
-0.8A
200
-0.4A
150
ID=-0.1A
100
50
0
-0 -1 -2 -3 -4 -5 -6 -7 -8 -9 -10
Gate-Source voltage VGS (V)
400
350
300
250
200
150
100
50
0
-0
RDS(ON) - ID
-1.8V
-2.5V
VGS=-4V
Common Source
Ta=25°C
-1
-2
-3
-4
-5
Drain current ID (A)
10
1
0.1
0.01
0.001
0.0001
0
ID - VGS
Ta=85°C
25°C
-25°C
Common Source
VDS=-3V
1
2
Gate-Source voltage VGS (V)
400
RDS(ON) - Ta
350 ^{Common Source}
300
250
-1.8V,-0.1A
200
-2.5V,-0.4A
150
100
VGS=-4V,ID=-0.8A
50
0
-60 -40 -20 0 20 40 60 80 100 120 140 160
Ambient temperature Ta(℃)
Vth - Ta
-1
Common Source
ID=-1mA
-0.8
VDS=-3V
-0.6
-0.4
-0.2
-0
-60 -40 -20 0 20 40 60 80 100 120 140 160
Ambient temperature Ta(°C)
3
2007-11-01