HN7G03FU Datasheet, PDF (4/7 Pages) Toshiba Semiconductor – Power Management Switch Applications

Q2
100
2.5
80
I_D – V_DS
2.0
COMMON SOURCE
Ta = 25°C
1.9
60
1.8
40
1.7
1.6
20
VGS = 1.4 V
0
0
2
4
6
8
10
DRAIN-SOURCE VOLTAGE V_DS (V)
HN7G03FU
I_D – V_DS (LOW-VOLTAGE REGION)
100
4.0 2.5
2.2
2.0
80
COMMON SOUCE
Ta = 25°C
60
1.8
40
1.6
20
VGS = 1.4 V
0
0
0.2
0.4
0.6
0.8
1.0
DRAIN-SOURCE VOLTAGE V_DS (V)
I_DR – V_DS
100
COMMOM SOURCE
VGS = 0
Ta = 25°C
D
10
G
1
0.1
IDR
S
0.01
0
−0.2
−0.4
−0.6 −0.8
−1.0 −1.2
DRAIN-SOURCE VOLTAGE V_DS (V)
1000
COMMON SOURCE
VDS = 3 V
100
I_D – V_GS
10
Ta = 100°C
1
25°C
−25°C
0.1
0.01
0
0.5
1
1.5
2
2.5
3
GATE-SOURCE VOLTAGE V_GS (V)
300
COMMON SOURCE
VDS = 3 V
Ta = 25°C
100
⎪Y_fs⎪ – I_D
50
30
10
5
1
35
10
30 50
100
DRAIN CURRENT I_D (mA)
4
C – V_DS
100
COMMON SOURCE
50
VGS = 0
f = 1 MHz
30
Ta = 25°C
10
Ciss
Coss
5
3
Crss
1
0.1
0.3
1
3
10
30
DRAIN-SOURCE VOLTAGE V_DS (V)
2007-11-01