HN7G03FU Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – Power Management Switch Applications

TOSHIBA Multichip Discrete Device
HN7G03FU
Power Management Switch Applications
Driver Circuit Applications
Interface Circuit Applications
Q1 (transistor) : 2SA1955 equivalent
Q2 (S-MOS) : SSM3K04FU equivalent
HN7G03FU
Unit: mm
Q1 Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_B
Rating
−15
−12
−5
−400
−50
Q2 Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Drain-source voltage
Gate-source voltage
Drain current
Symbol
V_DS
V_GSS
I_D
Rating
20
10
100
Unit
US6
V
1.EMITTER
2.BASE
3.DRAIN
4.SOURCE
5.GATE
6.COLLECTOR
V
JEDEC
―
V
JEITA
―
mA
TOSHIBA
2-2J1E
mA
Weight: 6.8 mg (typ.)
Unit
V
V
mA
Q1, Q2 Common Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Power dissipation
Junction temperature
Storage temperature range
P*
200
mW
T_j
125
°C
T_stg
−55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* Total rating.
1
2007-11-01