HN7G03FU Datasheet, PDF (2/7 Pages) Toshiba Semiconductor – Power Management Switch Applications

Q1 Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test
Circuit
Test Condition
Collector cutoff current
Emitter cutoff current
I_CBO
I_EBO
― V_CB =− 15 V, I_E = 0
― V_EB =− 5 V, I_C = 0
DC current gain
h_FE (Note 1) ― V_CE =− 2 V, I_C =− 10 mA
Collector-emitter
saturation voltage
V_{CE(sat) (1)}
―
V_{CE(sat) (2)}
―
Base-emitter saturation voltage
V_BE(sat)
―
Note 1: h_FE classification A: 300~600, B: 500~1000
I_C =− 10 mA, I_B =− 0.5 mA
I_C =− 200 mA, I_B =− 10 mA
I_C =− 200 mA, I_B =− 10 mA
Q2 Electrical Characteristics (Ta = 25°C)
Characteristic
Gate leakage current
Drain-source breakdown voltage
Drain current
Gate threshold voltage
Forward transfer admittance
Drain-source ON-resistance
Gate-source ON-resistance
Symbol
I_GSS
V_{(BR) DSS}
I_DSS
V_th
| Y_fs |
R_DS(ON)
R_GS
Test
Circuit
Test Condition
― V_GS = 10 V, V_DS = 0
― I_D = 100 μA, V_GS = 0
― V_DS = 20 V, V_GS = 0
― V_DS = 3 V, I_D = 0.1 mA
― V_DS = 3 V, I_D = 10 mA
― I_D = 10 mA, V_GS = 2.5 V
― V_GS = 0 ~ 10 V
HN7G03FU
Min Typ. Max Unit
―
― −0.1 μA
―
― −0.1 μA
300 ― 1000
―
−15 −30
mV
― −110 −250
― −0.87 −1.2 V
Min Typ. Max Unit
―
―
15 μA
20
―
―
V
―
―
1
μA
0.7
―
1.3
V
25
50
― mS
―
4
12
Ω
0.7 1.0 1.3 MΩ
Marking
Type Name
h_FE Rank
8A
Equivalent Circuit (Top View)
6 54
Q1
Q2
1 23
2
2007-11-01