GT25Q102_06 Datasheet, PDF (4/6 Pages) Toshiba Semiconductor – Silicon N Channel IGBT High Power Switching Applications

Switching time t_on, t_r – R_G
3
Common emitter
VCC = 600 V
VGG = ±15 V
IC = 25 A
ton
1
: Tc = 25°C
: Tc = 125°C
0.5
0.3
0.1
tr
0.05
35
10
30 50 100
Gate resistance R_G (Ω)
300 500
GT25Q102
Switching time t_on, t_r – I_C
1
0.5
ton
0.3
0.1
0.05
0.03
0.01
0
tr
Common emitter
VCC = 600 V
VGG = ±15 V
RG = 43 Ω
: Tc = 25°C
: Tc = 125°C
5
10
15
20
25
30
Collector current I_C (A)
Switching time t_off, t_f – R_G
3
Common emitter
VCC = 600 V
VGG = ±15 V
toff
IC = 25 A
: Tc = 25°C
1
: Tc = 125°C
0.5
0.3
tf
0.1
0.05
35
10
30 50 100
Gate resistance R_G (Ω)
300 500
1
0.5
0.3
0.1
0.05
0.03
0.01
0
Switching time t_off, t_f – I_C
toff
tf
Common emitter
VCC = 600 V
VGG = ±15 V
RG = 43 Ω
: Tc = 25°C
: Tc = 125°C
5
10
15
20
25
30
Collector current I_C (A)
Switching loss E_on, E_off – R_G
30
Common emitter
VCC = 600 V
VGG = ±15 V
IC = 25 A
10
: Tc = 25°C
: Tc = 125°C
Note2
Eon
5
3
Eoff
1
0.5
35
10
30 50 100
Gate resistance R_G (Ω)
300 500
Switching loss E_on, E_off – I_C
10
5
3
Eon
Eoff
1
0.5
Common emitter
VCC = 600 V
0.3
VGG = ±15 V
RG = 43 Ω
: Tc = 25°C
: Tc = 125°C
0.1
Note2
0
5
10
15
20
25
30
Collector current I_C (A)
4
2006-11-01