GT25Q102_06 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Silicon N Channel IGBT High Power Switching Applications

GT25Q102
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT25Q102
High Power Switching Applications
Unit: mm
• Third-generation IGBT
• Enhancement mode type
• High speed: t_f = 0.32 μs (max)
• Low saturation voltage: V_{CE (sat)} = 2.7 V (max)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-emitter voltage
V_CES
1200
V
Gate-emitter voltage
V_GES
±20
V
Collector current
DC
I_C
1 ms
I_CP
25
A
50
Collector power dissipation
(Tc = 25°C)
Junction temperature
P_C
200
W
T_j
150
°C
JEDEC
―
Storage temperature range
T_stg
−55 to 150
°C
JEITA
―
Note: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
2-21F2C
temperature/current/voltage and the significant change in
Weight: 9.75 g (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Marking
TOSHIBA
GT25Q102
JAPAN
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
1
2006-11-01