GT25Q102_06 Datasheet, PDF (2/6 Pages) Toshiba Semiconductor – Silicon N Channel IGBT High Power Switching Applications

GT25Q102
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Gate leakage current
Collector cut-off current
Gate-emitter cut-off voltage
Collector-emitter saturation voltage
Input capacitance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
Thermal resistance
I_GES
V_GE = ±20 V, V_CE = 0
⎯
I_CES
V_CE = 1200 V, V_GE = 0
⎯
V_{GE (OFF)} I_C = 2.5 mA, V_CE = 5 V
4.0
V_{CE (sat)} I_C = 25 A, V_GE = 15 V
⎯
C_ies
V_CE = 50 V, V_GE = 0, f = 1 MHz
⎯
t_r
Inductive Load
⎯
t_on
V_CC = 600 V, I_C = 25 A
⎯
t_f
V_GG = ±15 V, R_G = 43 Ω
⎯
t_off
(Note1) _⎯
R_{th (j-c)}
⎯
⎯
Note1: Switching time measurement circuit and input/output waveforms
Typ. Max Unit
⎯
⎯
⎯
2.1
1360
0.10
0.30
0.16
0.68
⎯
±500
1.0
7.0
2.7
⎯
⎯
⎯
0.32
⎯
0.625
nA
mA
V
V
pF
μs
°C/W
GT25Q301
−V_GE
I_C
R_G
L V_CC
V_CE
V_GE
0
90%
I_C
90%
0 ^VCE
10%
10%
t_{d (off)}
t_f
t_off
10%
90%
10%
t_{d (on)} t_r
t_on
10%
Note2: Switching loss measurement waveforms
V_GE
0
90%
10%
I_C
0 ^VCE
10%
E_off
E_on
2
2006-11-01