CMZB27 Datasheet, PDF (4/5 Pages) Toshiba Semiconductor – TOSHIBA Zener Diode Silicon Diffused Type

Ta max – P
160
Device mounted on a glass-epoxy board:
board size: 50 mm × 50 mm
Soldering land: 6.0 mm × 6.0 mm
board thickness: 1.6 mm
120
80
40
0
0
0.2
0.4
0.6
0.8
1.0
1.2
Power dissipation P (W)
CMZB12~CMZB53
1000
100
P_RSM – t_W (reference value)
PRSM
tW
Ta = 25°C
Rectangular pulse
Recommended
10
0.1
1
10
Pulse width t_W (ms)
25
CMZB12 to CMZB27
α_{T –} V_Z
20
(typ.)
15
10
5
10
15
20
25
30
Zener voltage V_Z (V)
50
CMZB30 to CMZB53
α_{T –} V_Z
45
(typ.)
40
35
30
25
26 30 34 38 42 46 50 54 58
Zener voltage V_Z (V)
r_{th (j-a)} – t
1000
Device mounted on a glass-epoxy board:
Board size: 50 mm × 50 mm
Soldering land: 2.1 mm × 1.4 mm
Board thickness: 1.6 mm
100
10
1
0.1
0.001
Device mounted on a glass-epoxy board:
Board size: 50 mm × 50 mm
Soldering land: 6.0 mm × 6.0 mm
Board thickness: 1.6 mm
Device mounted on a ceramic board:
Board size: 50 mm × 50 mm
Soldering land: 2.0 mm × 2.0 mm
Board thickness: 0.64 mm
0.01
0.1
1
10
Time t (s)
100
1000
4
2013-11-01