CMZB27 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – TOSHIBA Zener Diode Silicon Diffused Type

CMZB12~CMZB53
TOSHIBA Zener Diode Silicon Diffused Type
CMZB12~CMZB53
○ Communication, Control and
Measurement Equipment
○ Constant Voltage Regulation
○ Transient Suppressors
Unit: mm
②
• Average power dissipation: P = 1.0 W
• Zener voltage: V_Z = 12 to 53 V
• Suitable for high-density board assembly due to the use of a small
surface-mount package, M−FLAT^TM
Absolute Maximum Ratings (Ta = 25°C)
①
0.16
1.75 ± 0.1
+ 0.2
2.4 − 0.1
Characteristics
Symbol
Rating
Unit
Power dissipation
Junction temperature
Storage temperature range
P
1.0 (Note 1) W
T_j
−40 to 150
°C
T_stg
−40 to 150
°C
① ANODE
② CATHODE
Note 1:
Note 2:
Ta = 40°C
Device mounted on a glass-epoxy board
Board size: 50 mm × 50 mm
JEDEC
―
JEITA
―
Soldering size: 6 mm × 6 mm
TOSHIBA
3-4E1A
Board thickness: 1.6 mm
Weight: 0.023 g (typ.)
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating temperature / current /
voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Start of commercial production
2005-09
1
2013-11-01