2SD2131_06 Datasheet, PDF (4/5 Pages) Toshiba Semiconductor – Silicon NPN Triple Diffused Type (Darlington)

2SD2131
100
(1) No heat sink Ta = 25°C
30 ^{(2) Infinite heat sink Tc = 25°C}
R_th – t_w
10
3
1
0.3
0.1
0.001
0.01
0.1
1
10
Pulse width t_w (s)
(1)
(2)
100
1000
Safe Operating Area
20
10 _{IC max (pulsed)*}
IC max (continuous)
5
3
10 ms*
DC operation
Tc = 25°C
1
1 ms*
0.5
*: Single nonrepetitive
0.3 _{pulse Tc = 25°C}
Curves must be derated
linearly with increase in
temperature.
0.1
1
35
10
VCEO max
30 50 100
Collector-emitter voltage V_CE (V)
P_C – Ta
35
(1) Tc = Ta
30
Infinite heat sink
(1)
(2) No heat sink
25
20
15
10
5
(2)
0
0
25
50
75 100 125 150 175
Ambient temperature Ta (°C)
4
2006-11-21