2SD2131_06 Datasheet, PDF (2/5 Pages) Toshiba Semiconductor – Silicon NPN Triple Diffused Type (Darlington)

Electrical Characteristics (Tc = 25°C)
2SD2131
Characteristics
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Collector-base breakdown voltage
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Unclamped inductive load energy
Symbol
Test Condition
I_CBO
I_CEO
I_EBO
V _{(BR) CBO}
V _{(BR) CEO}
h_{FE (1)}
h_{FE (2)}
V_{CE (sat) (1)}
V_{CE (sat) (2)}
V_{BE (sat)}
E_S/B
V_CB = 45 V, I_E = 0
V_CE = 45 V, I_B = 0
V_EB = 6 V, I_C = 0
I_C = 1 mA, I_E = 0
I_C = 10 mA, I_B = 0
V_CE = 3 V, I_C = 3 A
V_CE = 3 V, I_C = 5 A
I_C = 3 A, I_B = 6 mA
I_C = 5 A, I_B = 20 mA
I_C = 3 A, I_B = 6 mA
Min
―
―
―
50
50
2000
1000
―
―
―
(Note 1) 150
Typ. Max Unit
―
10
μA
―
10
μA
―
2.5 mA
60
70
V
60
70
V
― 15000
―
―
1.1 1.5
V
1.3 2.5
1.7 2.5
V
―
―
mJ
Turn-on time
Switching time Storage time
t_on
20 μs
I_B1
Input
t_stg
I_B2
Output ―
1.0
―
―
4.0
―
μs
Fall time
V_CC = 30 V
t_f
―
2.5
―
I_B1 = −I_B2 = 6 mA, duty cycle ≤ 1%
Note 1: Measurement circuit for unclamped inductive load energy
T.U.T
I_B1
V_CC
L = 10 mH
I_B2
P_W
I_B1 = 0.1 A
0
I_CP
0
I_B2 = −0.1 A
Clamp (C-B Zener)
V_CE
I_C
Note 2: (1) Pulse width adjusted for desired I_CP (I_CP = 5.47 A min)
(2) E = 1/2 L I_CP²
Marking
D2131
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2
2006-11-21