2SD2131_06 Datasheet, PDF (3/5 Pages) Toshiba Semiconductor – Silicon NPN Triple Diffused Type (Darlington)

I_C – V_CE
5
3
Common
8
2
emitter
Tc = 25°C
1.5
6
1
0.7
4
0.5
IB = 0.3 mA
2
0
0
0
2
4
6
8
10
Collector-emitter voltage V_CE (V)
30000
10000
5000
3000
1000
500
h_FE – I_C
Common emitter
VCE = 3 V
Tc = 100°C
25
−55
200
0.05 0.1
0.3 0.5 1
3 5 10 20
Collector current I_C (A)
2SD2131
I_C – V_BE
8
6
4
2
Tc = 100°C
−55
Common emitter
25
VCE = 3 V
0
0
0.8
1.6
2.4
3.2
4.0
Base-emitter voltage V_BE (V)
V_CE – I_B
2.4
2.0
IC = 8 A
1.6
5
1.2
3
1
0.8 ^0.1
0.4
0
0.1
0.3 0.5 1
3 5 10
Common emitter
Tc = 25°C
30 50 100 300
Base current I_B (mA)
V_{CE (sat)} – I_C
10
Common emitter
5
IC/IB = 250
3
1
25
0.5
Tc = −55°C
100
0.3
0.1
0.3 0.5
1
35
10
Collector current I_C (A)
V_{BE (sat)} – I_C
10
Common emitter
5
IC/IB = 250
3
Tc = −55°C
25
1
100
0.5
0.3
0.1
0.3 0.5
1
35
10
Collector current I_C (A)
3
2006-11-21