2SD1223_10 Datasheet, PDF (4/5 Pages) Toshiba Semiconductor – Switching Applications

V_{BE (sat)} – I_C
5
Common emitter
IC/IB = 500
3
Tc = −55°C
25
1
100
0.5
0.3
1
3
5
Collector current I_C (A)
Safe Operating Area
10
IC max (pulsed)*
5
3 ^{IC max}
(continuous)
1 ms*
10 ms*
1
DC operation
0.5
(Tc = 25°C)
0.3
*: Single nonrepetitive pulse
0.1 Tc = 25°C
Curves must be derated linearly
0.05 _{with increase in temperature.}
VCEO
max
0.03
1
3
10
30
100
Collector-emitter voltage V_CE (V)
2SD1223
16 (1)
12
P_C – Ta
(1) Tc = Ta infinite heat sink
(2) Ceramic substrate
50 × 50 × 0.8 mm
(3) No heat sink
8
4 (2)
(3)
0
0
40
80
120
160
200
240
Ambient temperature Ta (°C)
4
2010-02-05