2SD1223_10 Datasheet, PDF (3/5 Pages) Toshiba Semiconductor – Switching Applications

I_C – V_CE
4
Common emitter
Tc = 25°C
500
3
450
400
350
2
300
250
1
IB = 200 μA
0
0
0
1
2
3
4
5
Collector-emitter voltage V_CE (V)
I_C – V_CE
4
Common emitter
Tc = −55°C
3
2
1
800
700
600
500
IB = 400 μA
0
0
0
1
2
3
4
5
Collector-emitter voltage V_CE (V)
2SD1223
I_C – V_CE
4
Common emitter
Tc = 100°C
3
300
250
2
200
175
150
1
IB = 125 μA
0
0
0
1
2
3
4
5
Collector-emitter voltage V_CE (V)
I_C – V_BE
4
Common emitter
VCE = 2 V
3
2
Tc = 100°C 25 −55
1
0
0
0.8
1.6
2.4
3.2
4.0
Base-emitter voltage V_BE (V)
10000
5000
3000
1000
500
300
0.1
h_FE – I_C
Tc = 100°C
25
−55
Common emitter
VCE = 2 V
0.3
1
3
10
Collector current I_C (A)
V_{CE (sat)} – I_C
3
1
0.5
0.3
0.2
Tc = −55°C
25
100
0.5
Common emitter
IC/IB = 500
1
3
5
Collector current I_C (A)
3
2010-02-05