2SD1223_10 Datasheet, PDF (2/5 Pages) Toshiba Semiconductor – Switching Applications

2SD1223
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Symbol
Test Condition
I_CBO
I_EBO
V _{(BR) CEO}
h_{FE (1)}
h_{FE (2)}
V_{CE (sat)}
V_{BE (sat)}
V_CB = 100 V, I_E = 0
V_EB = 5 V, I_C = 0
I_C = 10 mA, I_B = 0
V_CE = 2 V, I_C = 1 A
V_CE = 2 V, I_C = 3 A
I_C = 3 A, I_B = 6 mA
I_C = 3 A, I_B = 6 mA
Min Typ. Max Unit
―
―
―
―
80
―
2000 ―
1000 ―
―
―
―
―
20
μA
2.5 mA
―
V
―
―
1.5
V
2.0
V
Turn-on time
Switching time Storage time
Fall time
t_on
OUTPUT ^―
0.2
―
20 μs
I_B1
INPUT
t_stg
I_B2 ^IB2
―
1.5
―
μs
V_CC = 30 V
t_f
―
0.6
―
I_B1 = −I_B2 = 6 mA, DUTY CYCLE ≤ 1%
Marking
D1223
Part No. (or abbreviation code)
Lot No.
Note 1
Note 1:
A line under a Lot No. identifies the indication of product Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the
RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and
of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in
electrical and electronic equipment.
2
2010-02-05