2SC6041 Datasheet, PDF (4/5 Pages) Toshiba Semiconductor – TOSHIBA Transistor Silicon NPN Triple-Diffused Mesa Type

2SC6041
r_th(j-c) - t_w
10
1
0.1
0.01
0.001
0₁.0_0μ0001
0.00₁₀0₀1_μ 0.001
T_C = 25°C (infinite heat s ink)
Curves s hould be applied in the
therm al lim ited area.
(Single nonrepetitive puls e)
1 m^0.01 1⁰0^.1m 　 ¹100 m ¹⁰
Pulse width t_w (s)
100 1000
Safe Operating Area
100
Ｉc max (pulse d)^※
Ic max (continuous)
10
D C 　operat ion
(T_c=25°C )
1
100 ms^※
100 μs^※ 10 μs^※
1 ms^※
10 ms^※
Reverse Bias－Safe Operating Aria
100
Ic max (30A)
440 V,30 A
10
1
0.1
0.1
0 .0 1
※ _{Single nonrepetitive pulse}
Tc = 25°C
Curves must be derated
linearly w ith increase in
temperature.
V_{CE O} m ax
1
10
100
1000
Collector－emitter voltage V_CE (V)
1700V,10mA
0.01
0.001
@_　Ta = 25°C
Nonrepeated pulse
l_B2=－3A / L = 500 µs
V_CBO m ax
10
100
1000
10000
Collector－emitter voltage V_CE (V)
P_C－T_C
100
Infinite heat sink
80
60
40
20
0
0 25 50 75 100 125 150 175
Case temperature T_C ^(°C)
4
2006-06-20