2SC6041 Datasheet, PDF (2/5 Pages) Toshiba Semiconductor – TOSHIBA Transistor Silicon NPN Triple-Diffused Mesa Type

Electrical Characteristics (T_C = 25°C)
Characteristic
Collector cutoff current
Emitter cutoff current
Emitter–base breakdown voltage
DC current gain
Collector–emitter saturation voltage
Base–emitter saturation voltage
Transition frequency
Collector output capacitance
Switching time
Storage time
Fall time
Symbol
Test Condition
I_CBO
I_EBO
V _{(BR) EBO}
h_{FE (1)}
h_{FE (2)}
h_{FE (3)}
V_{CE (sat)}
V_{BE (sat)}
f_T
C_ob
t_stg
t_f
V_CB = 1700 V, I_E = 0
V_EB = 5 V, I_C = 0
I_E = 1 mA, I_B = 0
V_CE = 5 V, I_C = 2 A
V_CE = 5 V, I_C = 8 A
V_CE = 5 V, I_C = 12 A
I_C = 12 A, I_B = 3 A
I_C = 12 A, I_B = 3 A
V_CE = 10 V, I_C = 0.1 A
V_CB = 10 V, I_E = 0, f = 1 MHz
I_CP = 6 A, I_B1 (end) = 0.8 A
f_H = 32 kHz
2SC6041
Min Typ. Max Unit
―
―
1
mA
―
― 100 µA
5
―
―
V
30
―
60
8
―
12
―
5
―
7
―
―
1.5
V
―
― 1.25
V
―
2
― MHz
― 260 ―
pF
―
4
―
µs
― 0.15 ―
2
2006-06-20