2SC6041 Datasheet, PDF (3/5 Pages) Toshiba Semiconductor – TOSHIBA Transistor Silicon NPN Triple-Diffused Mesa Type

I_C－V_CE
20
3.5
4
16
3
2.5
2
12
1.5
0.8 ^1.0
1.2
8
0.6
0.4
IB= 0.2A
4
Com m on em itter
T_C = 25°C
0
0
2
4
6
8
10
Collector - em itter voltage V_CE (V)
10
1
0 .1
0.01
1
h_FE－I_C
100
100
25
TC = - 25°C
10
Com m on em itter
V_CE = 5 V
1
0 .0 1
0 .1
1
10
100
Collector current I_C (A)
10
1
0 .1
0.01
1
I_C－V_BE
20
10
Com m on em itter
16
V_CE = 5 V
1
12
25
8
0 .1
4
TC = 100°C
- 25
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4
Bas e_－em itter voltage V_BE (V)
3
0.01
1
2SC6041
V_{CE(sat)－}I_C
10
8
6
IC /IB = 4
Com m on em itter
T_C=_－25°C
10
100
Collector current I_C (A)
V_CE(sat)－I_C
10
8
6
IC/IB= 4
Com m on em itter
T_C = 25°C
10
100
Collector current I_C (A)
V_CE(sat)－I_C
10
86
IC /IB = 4
Com m on em itter
T_C = 100°C
10
100
Collector current I_C (A)
2006-06-20