2SC6033_06 Datasheet, PDF (4/5 Pages) Toshiba Semiconductor – Silicon NPN Epitaxial Type

2SC6033
r_th – t_w
1000
100
10
1
0.001
Curves should be applied in thermal limited area.
Single nonrepetitive pulse Ta = 25°C
Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm²)
0.01
0.1
1
10
100
1000
Pulse width tw (s)
Safe Operating Area
10
IC max (Pulse)*
10 ms* 1 ms* 100 μs*
10 μs*
IC max (Continuous)*
100 ms*
1
10 s*
DC operation
Ta = 25°C
*: Single nonrepetitive pulse
Ta = 25°C
Note that the curves for 100 ms,
0.1 _{10 s and DC operation will be}
different when the devices aren’t
mounted on an FR4 board (glass
epoxy, 1.6 mm thick, Cu area:
645 mm²).
Single-device operation
These characteristic curves must
be derated linearly with increase
in temperature.
0.01
0.1
1
VCEO max
10
100
Collector-emitter voltage V_CE (V)
4
2006-11-13