2SC6033_06 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Silicon NPN Epitaxial Type

TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC6033
High-Speed Swtching Applications
DC-DC Converter Applications
Storobe Flash Applications
ＴＳＭ
2SC6033
Unit : mm
+0.2
2.8-0.3
+0.2
1.6-0.1
• High DC current gain: h_FE = 250 to 400 (I_C = 0.3 A)
• Low collector-emitter saturation: V_{CE (sat)} = 0.18 V (max)
• High-speed switching: t_f = 38 ns (typ.)
1
2
3
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V_CBO
100
V
Collector-emitter voltage
V_CEX
80
V
V_CEO
50
V
Emitter-base voltage
V_EBO
6
V
Collector current
DC
I_C
Pulse
I_CP
2.5
A
5
Base current
I_B
0.3
A
Collector power
dissipation
t = 10s
1.00
P_C (Note 1)
W
DC
0.625
1. Base
2. Emitter
3. Collector
JEDEC
JEITA
TOSHIBA
－
－
2-3－S1A
Weight: 0.01g (Typ.)
Junction temperature
Storage temperature range
T_j
150
°C
T_stg
−55 to 150
°C
Note 1: Mounted on an FR4 board (glass epoxy, 1.6mm thick, Cu area: 64.5 mm²)
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2006-11-13