2SC6033_06 Datasheet, PDF (3/5 Pages) Toshiba Semiconductor – Silicon NPN Epitaxial Type

I_C – V_CE
3.0
Common emitter
Ta=25℃
2.5 Pulse test
40
30
20
2.0
10
1.5
5
1.0
2
0.5
IB = 1 mA
0
0
1
2
3
4
5
Collector-emitter voltage V_CE (V)
V_{CE (sat)} – I_C
1
Common emitter
β= 30
Pulse test
25
0.1
Ta = 100°C
−55
0.01
0.001
0.01
0.1
1
10
Collector current I_C (A)
2SC6033
1000
Ta = 100°C
25
−55
100
h_FE – I_C
Common emitter
VCE = 2 V
Pulse test
10
0.001
0.01
0.1
1
10
Collector current I_C (A)
V_{BE (sat)} – I_C
10
Common emitter
β= 30
Pulse test
1
25
−55
Ta = 100°C
0.01
0.001
0.01
0.1
1
10
Collector current I_C (A)
2.5
Common emitter
VCE = 2 V
Pulse test
2.0
I_C – V_BE
1.5
Ta = 100°C
−55
1.0
0.5
25
0
0
0.2
0.4
0.6
0.8
1.0
1.2
Base-emitter voltage V_BE (V)
3
2006-11-13