2SC5810 Datasheet, PDF (4/5 Pages) Toshiba Semiconductor – TOSHIBA Transistor Silicon NPN Epitaxial Type

2SC5810
r_th – t_w
1000
300
100
30
10
3
1
0.001 0.003 0.01
Curves should be applied in thermal limited area.
Single nonrepetitive pulse Ta = 25°C
Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm²)
0.03 0.1
0.3
1
3
10
Pulse width t_w (s)
30
100 300 1000
Safe Operating Area
10
3 _{IC max (pulsed)*}
10 ms* 1 ms* 100 µs* _{10 µs*}
IC max (continuous) 10 s*
1
DC operation
(Ta = 25°C)
0.3
100 ms*
*: Single nonrepetitive pulse
Ta = 25°C
0.1 _{Note that the curves for 100 ms,}
10 s and DC operation will be
different when the devices aren’t
mounted on an FR4 board (glass
0.03 epoxy, 1.6 mm thick, Cu area:
645 mm²). These characteristic
curves must be derated linearly
with increase in temperature.
0.01
0.1
0.3
1
3
10
30
100
Collector-emitter voltage V_CE (V)
4
2004-07-07