2SC5810 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – TOSHIBA Transistor Silicon NPN Epitaxial Type

TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC5810
High-Speed Switching Applications
DC-DC Converter Applications
Strobe Applications
2SC5810
Unit: mm
• High DC current gain: hFE = 400 to 1000 (IC = 0.1 A)
• Low collector-emitter saturation voltage: VCE (sat) = 0.17 V (max)
• High-speed switching: tf = 85 ns (typ.)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Base current
Collector power
dissipation
DC
t = 10 s
Junction temperature
Storage temperature range
V_CBO
100
V
V_CEX
80
V
V_CEO
50
V_EBO
7
V
I_C
1.0
A
I_CP
2.0
I_B
0.1
A
2.0
P_C (Note)
W
1.0
T_j
150
°C
T_stg
−55 to 150
°C
Note: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area:
645 mm²)
Electrical Characteristics (Ta = 25°C)
JEDEC
―
JEITA
SC-62
TOSHIBA
2-5K1A
Weight: 0.05 g (typ.)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector output capacitance
Rise time
Switching time
Storage time
Fall time
Symbol
Test Condition
I_CBO
I_EBO
V _{(BR) CEO}
h_FE (1)
h_FE (2)
V_{CE (sat)}
V_{BE (sat)}
C_ob
t_r
t_stg
t_f
V_CB = 100 V, I_E = 0
V_EB = 7 V, I_C = 0
I_C = 10 mA, I_B = 0
V_CE = 2 V, I_C = 0.1 A
V_CE = 2 V, I_C = 0.3 A
I_C = 300 mA, I_B = 6 mA
I_C = 300 mA, I_B = 6 mA
V_CB = 10 V, I_E = 0, f = 1 MHz
See Figure 1.
V_CC ≈ 30 V, R_L = 100 Ω
I_B1 = −I_B2 = 10 mA
Min Typ. Max Unit
―
― 100 nA
―
― 100 nA
50
―
―
V
400 ― 1000
200 ―
―
―
― 0.17
V
―
― 1.10
V
―
5
―
pF
―
35
⎯
― 680 ―
ns
―
85
―
1
2004-07-07