2SC5810 Datasheet, PDF (3/5 Pages) Toshiba Semiconductor – TOSHIBA Transistor Silicon NPN Epitaxial Type

1
20
0.8
0.6
0.4
I_C − V_CE
15
10
8
6
4
2
IB = 1 mA
0.2
Common emitter
Ta = 25 °C
0
0Single ^{nonrepetitive pulse}
0
0.2
0.4
0.6
0.8
1
1.2
Collector-emitter voltage V_CE (V)
2SC5810
10000
1000
h_FE − I_C
Common emitter
VCE = 2 V
Single nonrepetitive pulse
Ta = 100°C
25
100
−55
30
0.001 0.003 0.01 0.03
0.1
0.3
1
Collector current I_C (A)
V_{CE (sat)} − I_C
1
Common emitter
IC/IB = 50
0.3 Single nonrepetitive pulse
0.1
Ta = 100°C
0.03
25 −55
0.01
0.003
0.001 0.003 0.01 0.03
0.1
0.3
1
Collector current I_C (A)
V_{BE (sat)} − I_C
10
Common emitter
IC/IB = 50
3
Single nonrepetitive pulse
25 ^−55
1
Ta = 100°C
0.3
0.1
0.03
0.001 0.003 0.01 0.03
0.1
0.3
1
Collector current I_C (A)
I_C – V_BE
1.0
Common emitter
VCE = 2 V
Single nonrepetitive pulse
0.8
0.6
0.4
0.2
0
0
0.2
0.4
0.6
0.8
1.0
1.2
Base-emitter voltage V_BE (V)
3
2004-07-07