2SC5755_04 Datasheet, PDF (4/5 Pages) Toshiba Semiconductor – High-Speed Switching Applications

2SC5755
r_th – t_w
1000
300
100
30
10
3
1
0.001 0.003 0.01 0.03
Curves should be applied in thermal limited area.
Single nonrepetitive pulse Ta = 25°C
Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645
2
0.1 0.3
1
3
10
30
100 300 1000
Pulse width t_w (s)
Safe Operating Area
10
IC max (pulsed)*
3 _{IC max (continuous)}
1
DC operation
(Ta = 25°C)
0.3
*: Single nonrepetitive pulse
Ta = 25°C
0.1 Note that the curves for 100 ms,
10 s and DC operation will be
different when the devices
aren’t mounted on an FR4
0.03
board (glass epoxy, 1.6 mm
thick, Cu area: 645 mm²).
These characteristic curves
must be derated linearly with
increase in temperature.
0.01
0.03 0.1 0.3
1
3
100 µs*
1 ms*
10 ms*
100 ms*
10 s*
10
30
100
Collector-emitter voltage V_CE (V)
4
2004-07-01