2SC5755_04 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – High-Speed Switching Applications

TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC5755
High-Speed Switching Applications
DC-DC Converter Applications
Strobe Applications
2SC5755
Unit: mm
• High DC current gain: hFE = 400 to 1000 (IC = 0.2 A)
• Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max)
• High-speed switching: tf = 25 ns (typ.)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Base current
Collector power
dissipation
DC
t = 10 s
Junction temperature
Storage temperature range
V_CBO
20
V
V_CEO
10
V
V_EBO
7
V
I_C
2
A
I_CP
3.5
I_B
200
mA
500
P_C (Note)
mW
750
T_j
150
°C
T_stg
−55 to 150
°C
Note: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area:
645 mm²)
JEDEC
―
JEITA
―
TOSHIBA
2-3S1C
Weight: 0.01 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Rise time
Switching time
Storage time
Fall time
Symbol
Test Condition
I_CBO
I_EBO
V _{(BR) CEO}
h_FE (1)
h_FE (2)
V_{CE (sat)}
V_{BE (sat)}
t_r
t_stg
t_f
V_CB = 20 V, I_E = 0
V_EB = 7 V, I_C = 0
I_C = 10 mA, I_B = 0
V_CE = 2 V, I_C = 0.2 A
V_CE = 2 V, I_C = 0.6 A
I_C = 0.6 A, I_B = 12 mA
I_C = 0.6 A, I_B = 12 mA
See Figure 1.
V_{CC ≈} 6 V, R_L = 10 Ω
I_B1 = −I_B2 = 12 mA
Min Typ. Max Unit
⎯
⎯ 100 nA
⎯
⎯ 100 nA
10
⎯
⎯
V
400 ⎯ 1000
200 ⎯
⎯
⎯
⎯ 0.12
V
⎯
⎯ 1.10
V
⎯
60
⎯
⎯ 215 ⎯
ns
⎯
25
⎯
1
2004-07-01