2SC5755_04 Datasheet, PDF (3/5 Pages) Toshiba Semiconductor – High-Speed Switching Applications

I_C − V_CE
2.4
60 ^{40 30}
2
20
10
8
1.6
6
1.2
4
0.8
IB = 2mA
0.4
Common emitter
Ta = 25 °C
0
Single nonrepetitive pulse
0
0
0.2
0.4
0.6
0.8
1.0
1.2
Collector-emitter voltage V_CE (V)
2SC5755
10000
h_FE − I_C
3000
1000
300
100
Ta = 100°C
25
−55
30
10
0.001 0.003
Common emitter
VCE = 2 V
Single nonrepetitive pulse
0.01 0.03 0.1 0.3
1
3
Collector current I_C (A)
V_{CE (sat)} − I_C
1
Common emitter
IC/IB = 50
0.3 _{Single nonrepetitive pulse}
0.1
25
Ta = 100°C
0.03
−55
0.01
0.003
0.001
0.001 0.003 0.01 0.03 0.1 0.3
1
3
Collector current I_C (A)
V_{BE (sat)} − I_C
10
3
−55
1
Ta = 100°C
0.3
25
0.1
0.03
0.01
0.001 0.003
Common emitter
IC/IB = 50
Single nonrepetitive pulse
0.01 0.03 0.1 0.3
1
3
Collector current I_C (A)
I_C – V_BE
2
Common emitter
VCE = 2 V
Single nonrepetitive pulse
1.6
1.2
0.8
Ta = 100°C
25
−55
0.4
0
0
0.4
0.8
1.2
1.6
Base-emitter voltage V_BE (V)
3
2004-07-01