THNCF008MBA Datasheet, PDF (35/48 Pages) Toshiba Semiconductor – The THNCFxxxMBA/BAI series CompactFlash card is a flash technology based with ATA interface flash memory card.

Preliminary
THNCFxxxMBA/BAI Series
DC CHARACTERISTICS (V_CC = 3.3 V ± 0.3V, V_CC = 5 V ± 0.5V)
Ta = 0°C~70°C for THNCFxxxMBA (Commercial grade)
Ta = -40°C~85°C for THNCFxxxMBAI (Industrial grade)
SYMBOL
PARAMETER
MIN
MAX
TYP.
UNIT TEST CONDITIONS
I_LI
Input leakage current

I_LO
Output leakage current

−I_PU
Pull-up current (Resistivity)

−I_PD
Pull-down current (Resistivity)


I_CCS
Sleep mode current

Operating current @ 3.3V
Write operation

Read operation

I_CCO
Operating current @ 5V
Write operation

Read operation

1

µA

1
µA
V_OUT = high
impedance

43 (75)
µA (kΩ)
V_FORCE = 3.3V

−48 / (206) µA (kΩ)
V_FORCE = 0V
1.5
1.0
V_CC = 3.3V
mA
2.0
1.2
V_CC = 5V

38
mA
V_CC = 3.3V operation

30

43
mA
V_CC = 5V operation

35
Input Characteristics
Type SYMBOL
PARAMETER
MIN MAX TYP UNIT CONDITION
V_IH
1
V_IL
V_IH
2
V_IL
V_T+
3
V_T-
V_T+
4
V_T-
Input High Voltage CMOS
(5V Tolerance)
2.0


2.0
Input Low Voltage CMOS
(5V Tolerance)
1.0


1.0
Input High Voltage
(3.3V : CMOS 5V: TTL)
2.0


2.0
Input Low Voltage CMOS

(3.3V : CMOS 5V: TTL)
Input High Voltage CMOS with Schmitt trigger

(5V Tolerance)
1.0

0.8
V
2.5
2.1
2.5
2.1
Input Low Voltage CMOS with Schmitt trigger
0.9
(5V Tolerance)
0.9
1.2

1.2
Input High Voltage with Schmitt trigger
(3.3V : CMOS 5V: TTL)
2.3
2.1

2.0
1.8
Input Low Voltage with Schmitt trigger
(3.3V : CMOS 5V: TTL)
1.0
1.2

0.8
1.1
V_CC = 3.3 V
V_CC = 5 V
V_CC = 3.3 V
V_CC = 5 V
V_CC = 3.3 V
V_CC = 5 V
V_CC = 3.3 V
V_CC = 5 V
V_CC = 3.3 V
V_CC = 5 V
V_CC = 3.3 V
V_CC = 5 V
V_CC = 3.3 V
V_CC = 5 V
V_CC = 3.3 V
V_CC = 5 V
Output Drive Characteristics
Type SYMBOL
PARAMETER
1
V_OH
V_OL
Output High Voltage
Output Low Voltage
MIN
MAX
V_CC − 0.8


Gnd + 0.4
TYP


UNIT CONDITION
V
I_OH = −4mA
I_OL = 4mA
2002-10-20 35/48