THNCF008MBA Datasheet, PDF (33/48 Pages) Toshiba Semiconductor – The THNCFxxxMBA/BAI series CompactFlash card is a flash technology based with ATA interface flash memory card.

Card System performance
Preliminary
THNCFxxxMBA/BAI Series
ITEM
Performance
Set up times (Reset to Ready)
400 ms (max.) *1
Set up times (Sleep to Idle)
100µs (max.)
Set up times (Deep Power Down to Idle)
4 ms (max.)
Data transfer rate to / from host
16.6 M byte / s burst (max.), theoretically
Sustained read transfer rate
6.5 M byte / s (max.), actually *2
Sustained write transfer rate
1.5 M byte / s (max.) <8MB~48MB>, actually *2
Sustained write transfer rate
3.2 M byte / s (max.) <64MB~512MB>, actually *2
Controller overhead (Command to DRQ)
4 ms (max.)
Data transfer cycle end to ready (Sector write)
500µs (typ.), 50ms (max.)
Notes:
1. This parameter will be changed for different capacity and NAND type flash memory, the typical set up time for 2 Giga Bytes
flash card is 325ms
2. The actual transfer rate is measured under ATA PIO mode 4 with single cycle time as 120ns.
ELECTRICAL SPECIFICATION
SYMBOL
PARAMETER
V_IN , V_OUT All input / output voltage
Power Supply Voltage
V_CC
(Absolute Maximum Ratings)
Power Supply Voltage
V_CC
(Recommended Operation Condition)
T_opr
Operating Temperature
T_stg
Storage Temperature
Notes:
1. THNCFxxxMBA Series (Commercial grade)
2. THNCFxxxMBAI Series (Industrial grade)
MIN
MAX
TYP
−0.3
V_CC+ 0.3

−0.6
6.0

4.5
5.5
5.0
3.0
3.6
3.3
0
70
25
−40
85

−20
85

−45
90

UNIT
V
NOTES
V
V
V
°C
Commercial grade *1
°C
Industrial grade *2
°C
Commercial grade *1
°C
Industrial grade *2
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