U20GL2C53A Datasheet, PDF (3/4 Pages) Toshiba Semiconductor – TOSHIBA High Efficiency Diode Stack (HED) Silicon Epitaxial Type

100
One sell
i_F – v_F
Tj = 150°C
10
100°C
75°C
25°C
1
0.1
0.0
1.0
2.0
3.0
Instantaneous forward voltage vF (V)
Tc max – I_o
160
140
120
100
a = 30°
80 _Rectangular
waveform
60 ^{(one cell)}
180°
60° 90° 120°
sin
40
0° a 360°
20
Conduction
angle a
0
0
4
8
12
16
20
24
Average output rectified current I_o (A)
10
One sell
r_{th (j-c)} – t
1
U20GL2C53A
P_{F (AV)} – I_o
40
sin
32
120°
180°
90°
24
60°
a = 30°
16
Rectangular
waveform
(one cell)
8
0
0
4
0° a 360°
Conduction
angle a
8
12
16
20
24
Average output rectified current I_o (A)
Surge forward current (non-repetitive)
120
One sell
Single phase full
100
Sine wave
Ta = 25°C
80
60
60 Hz
40
20
50 Hz
0
1
10
100
Number of cycles
C_j – V_R
100
f = 1 MHz
Ta = 25°C
One cell
0.1
10
0.001 0.01
0.1
1
10
100 1000
1
Time t (s)
3
10
100
Reverse voltage V_R (V)
2003-02-17