U20GL2C53A Datasheet, PDF (2/4 Pages) Toshiba Semiconductor – TOSHIBA High Efficiency Diode Stack (HED) Silicon Epitaxial Type

Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Peak forward voltage
Repetitive peak reverse current
Reverse recovery time
Thermal resistance
V_FM
I_RRM
t_rr
R_{th (j-c)}
Note: V_FM, I_RRM, t_rr: A value of one cell.
Test Condition
I_FM = 10 A
V_RRM = 400 V
I_F = 2 A, di/dt = -50 A/ms
DC Total, Junction to Case
Marking
U20GL2C53A
Min Typ. Max Unit
¾
¾
1.8
V
¾
¾
50
mA
¾
¾
35
ns
¾
¾
1.5 °C/W
※1
※2 ※3
※1
MARK
20GL2C
TYPE U20GL2C53A
※2
A
Lot Number
※3
Month (starting from alphabet A)
Year (last number of the christian era)
Standard Soldering Pad
8.0
unit: mm
2.5 2.0
3.2
3.8
2
2003-02-17