U20GL2C53A Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – TOSHIBA High Efficiency Diode Stack (HED) Silicon Epitaxial Type

U20GL2C53A
TOSHIBA High Efficiency Diode Stack (HED) Silicon Epitaxial Type
U20GL2C53A
Switching Mode Power Supply Application
Converter&Chopper Application
Unit: mm
· Repetitive peak reverse voltage: VRRM = 400 V
· Average output recified current: IO = 20 A
· Ultra fast reverse-recovery time: trr = 35 ns (max)
· Low switching losses and output noise.
· Power surface mount device for thin flat package.
“TFP” (TOSHIBA designation)
Maximum Ratings (Ta = 25°C)
Characteristics
Repetitive peak reverse voltage
Average output recified current
Peak one cycle surge forward current
(non-repetitive, sine wave)
Junction temperature
Storage temperature range
Symbol
V_RRM
I_O
I_FSM
T_j
T_stg
Rating
Unit
400
V
20
A
100 (50 Hz)
A
110 (60 Hz)
-40 to 150
°C
-40 to 150
°C
JEDEC
―
JEITA
―
TOSHIBA
12-9B1A
Weight: 0.74 g (typ.)
Polarity
③K
*①A1 ②A2
*: Common Terminal
1
2003-02-17