TLP112_07 Datasheet, PDF (3/7 Pages) Toshiba Semiconductor – Photo−IC Digital Logic Isolation

TLP112
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Forward voltage
temperature coefficient
Reverse current
Capacitance between
terminals
High level output
current
High level supply
current
Current transfer ratio
Low level output
voltage
Isolation resistance
Stray capacitance
between input to output
Symbol
Test Condition
Min. Typ. Max. Unit
V_F
ΔV_F / ΔTa
I_R
I_F = 16mA
I_F = 16mA
V_R = 5V
C_T
V_F = 0, f = 1MHz
― 1.65 1.85
V
―
−2
― mV / °C
―
―
10
μA
―
45
―
pF
I_{OH (1)}
I_{OH (2)}
I_OH
I_F = 0mA, V_CC = V_O = 5.5V
I_F = 0mA, V_CC = V_O = 15V
I_F = 0mA, V_CC = V_O = 15V
Ta = 70°C
―
3
500
nA
―
―
5
μA
―
―
50
I_CCH
I_F = 0mA, V_CC = 15V
― 0.01
1
μA
I_O / I_F
I_F =16mA, V_CC = 4.5V
V_O = 0.4V
10
―
―
%
V_OL
I_F = 16 mA, V_CC = 4.5V
I_O = 1.1mA
―
―
0.4
V
R_S
R.H. ≤ 60%
V_S = 500V DC
(Note 6) ^{5×1010 1014}
―
Ω
C_S
V_S = 0, f = 1MHz
(Note 6) ―
0.8
―
pF
Switching Characteristics (Ta = 25°C)
Characteristic
Propagation delay time
(H→L)
Propagation delay time
(L→H)
Common mode transient
immunity at high output
level
Common mode transient
immunity at low output
level
Symbol
t_pHL
t_pLH
CM_H
CM_L
Test
Cir−
Test Condition
cuit
1
I_F = 0→16mA
V_CC = 5V, R_L= 4.1kΩ
1
I_F = 16→0mA
V_CC = 5V, R_L= 4.1kΩ
2 ^{IF = 0mA, VCM = 200Vp−p}
R_L = 4.1kΩ
2 ^{IF =16mA, VCM = 200Vp−p}
R_L = 4.1kΩ
Min. Typ. Max. Unit
―
―
0.8
μs
―
―
2.0
μs
― 1500 ― V / μs
― −1500 ― V / μs
(Note 6) Device considered a two−terminal device: Pins 1 and 3 shorted together and Pin 4,
5 and 6 shorted together.
(Note 7) Maximum electrostatic discharge voltage for any pins: 100V (C=200pF, R=0)
3
2007-10-01