TLP112_07 Datasheet, PDF (2/7 Pages) Toshiba Semiconductor – Photo−IC Digital Logic Isolation

TLP112
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Forward current
Pulse forward current
Peak transient forward
current
Reverse voltage
Diode power dissipation
Output current
Peak output current
Supply voltage
Output voltage
Output power dissipation
Operating temperature range
Storage temperature range
Lead soldering temperature(10s)
Isolation voltage
(AC, 1 min., R.H ≤ 60%,
(Note 1)
(Note 2)
(Note 3)
(Note 4)
(Note 5)
Note 6)
I_F
I_FP
I_FPT
V_R
P_D
I_O
I_OP
V_CC
V_O
P_o
T_opr
T_stg
T_sol
BV_S
25
50
1
5
45
8
16
−0.5~15
−0.5~15
100
−55~100
−55~125
260
2500
mA
mA
A
V
mW
mA
mA
V
V
mW
°C
°C
°C
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(Note 1) Derate 0.8 mA / °C above 70°C.
(Note 2) 50% duty cycle,1ms pulse width.
Derate 1.6mA / °C above 70°C.
(Note 3) Pulse width ≤ 1μs, 300pps.
(Note 4) Derate 0.9mW / °C above 70°C.
(Note 5) Derate 2mW / °C above 70°C.
2
2007-10-01