TLN217 Datasheet, PDF (3/4 Pages) Toshiba Semiconductor – Infrared Light-Emitting Diode for Still Camera Light Source for Auto Focus

fe – I_FP
(typ.)
60
50
Ta = -20°C
40
30
25
60
20
10
0
0
200
400
600
800
Pulse forward current IFP (mA)
Wavelength characteristic
1
IF = 50 mA
Ta = 25°C
0.8
0.6
0.4
0.2
0
780 800 820 840 860 880 900 920 940
Wavelength l (nm)
TLN217
I_FP – V_FP
(typ.)
800
600
400
Ta = 60°C
200
25
-20
0
0
1
2
3
Pulse forward voltage VFP (V)
Radiation pattern
(typ.)
Ta = 25°C
20° ^{10° 0° 10°} _20°
30°
30°
40°
40°
50°
50°
60°
60°
70°
70°
80°
80°
90°
0
0.2 0.4 0.6 0.8 1.090^°
Relative intensity
3
2002-02-20