TLN217 Datasheet, PDF (2/4 Pages) Toshiba Semiconductor – Infrared Light-Emitting Diode for Still Camera Light Source for Auto Focus

TLN217
Optical and Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Pulse forward voltage
Reverse current
Effective emission spot size
Radiation flux
Half value angle
Peak emission wavelength
Spectral line half width
V_FP
I_FP = 300 mA, t = 10 ms
¾
1.6 1.75
V
I_R
V_R = 1 V
¾
¾
100
mA
X
Half value of peak
Y
Half value of peak
(Note 2) ¾
466
¾
mm
(Note 2) ¾
210
¾
fe
I_FP = 300 mA, t = 10 ms (Note 3) 12
17
¾ mW
q¹
2
I_F = 50 mA
¾ ±32.5 ¾
°
lp
I_F = 50 mA
850 870 900 nm
Dl
I_F = 50 mA
¾
35
¾
nm
Note 2: The directions of X and Y are in the following diagram.
The shaded area represents the emitting surface.
Y
(LED chip)
X
Note 3: Luminous radiation output to effective angle = ±25°
Precaution
· Soldering temperature: 260°C (max)
Soldering time: 5 s (max)
(Soldering must be performed 2 mm from the bottom of the package.)
· When forming the leads, bend each lead under the 2 mm from the body of the device. Soldering must be
performed after the leads have been formed.
· The TLN217 is intended for a camera AF use only. Please do not use this device except for a camera.
2
2002-02-20