TLN217 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – Infrared Light-Emitting Diode for Still Camera Light Source for Auto Focus

Preliminary
TOSHIBA Infrared LED GaAℓAs Infrared Emitter
TLN217
Infrared Light-Emitting Diode for Still Camera
Light Source for Auto Focus
The TLN217 is a high output infrared LED employing a new structure
of GaAℓAs current confining LED chip.
· Optical radiation of current confining LED chip is condensed by clear
resin lens.
· High output and low forward voltage
· Peak emission wavelength: λp = 870 nm (typ.)
· Spectral line half width: ∆λ = 35 nm (typ.)
· Effective emission diameter: 210 ×466 µm (typ.)
TLN217
Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics
Pulse forward current
Reverse voltage
Operating temperature
Storage temperature
Symbol
Rating
Unit
I_FP (Note 1)
1.1
A
V_R
1
V
T_opr
-25 to 60
°C
T_stg
-40 to 90
°C
JEDEC
―
JEITA
―
TOSHIBA
―
Weight: 0.18 g (typ.)
Note 1: Total 30000 cycles (total power applied time is 7.8 h). One cycle takes 137-ms power applied time and
800-ms pause time under the drive condition of 2.6 kHz frequency and 13.2% duty cycle.
I_FP
1
2
360
50 ms
330 ms
One cycle = 937 ms
OFF
1 Total 30000 cycles (t = 7.8 h)
1
2002-02-20