TLN212 Datasheet, PDF (3/4 Pages) Toshiba Semiconductor – INFRARED LIGHT-EMISSION DIODE FOR STILL CAMERA LIGHT SOURCE FOR AUTO FOCUS

I_F – Ta
60
40
20
0
0
20
40
60
80
Ambient temperature Ta (°C)
Wavelength Characteriistic
(typ.)
1.0
IF = 50mA
Ta = 25°C
0.8
0.6
0.4
0.2
0
820
840
860
880
900
920
940
Wave length λ (nm)
TLN212(F)
φ_e – I_FP
(typ.)
40
30
Ta = −20°C
20
25°
60°
10
0
0
200
400
600
800
Pulse forward current IFP (mA)
I_FP – V_FP
(typ.)
800
600
Ta = 60°
400
25°
−20°
200
0
0
1
2
3
Pulse forward voltage VFP (V)
Radiation Pattern
(typ.)
Ta = 25°C
20° ^{10° 0° 10°} 20°
30°
30°
40°
40°
50°
50°
60°
60°
70°
70°
80°
80°
90°
90°
0 0.2 0.4 0.6 0.8 1.0
Relative intensity
3
2004-01-06