TLN212 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – INFRARED LIGHT-EMISSION DIODE FOR STILL CAMERA LIGHT SOURCE FOR AUTO FOCUS

TOSHIBA Infrared LED GaAℓAs Infrared Emitter
TLN212(F)
Lead Free Product
Infrared Light−Emission Diode For Still Camera
Light Source For Auto Focus
• Optical radiation of current confining LED chip is condensed by a
resin lens.
• High output
• Effective emission diameter of 388 × 296µm
• Optical output efficiently radiated in solid angle of 1.136sr
• Can be operated at VCC = 3V (which is equal to is two cells)
TLN212(F)
Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Forward current
(Note 1)
I_F
Pulse forward current
(Note 2)
I_FP
Reverse voltage
V_R
Operating temperature
T_opr
Storage temperature
T_stg
50
mA
800
mA
1
V
−25~60
°C
−40~90
°C
(Note 1): Permissible value for acceptance inspection / characteristic
test and is guaranteed for actual application
(Note 2): Within 4 hours at 1 cycle with frequency 10kHz, duty 50%,
power applied for 0.1s paused for 0.4s
TOSHIBA
―
Weight: 0.18g(typ.)
I_FP = 0.8A
1
2
16
0.22ms
1.56ms
28.48ms
428.48ms
1
400ms
1
2004-01-06