TLN212 Datasheet, PDF (2/4 Pages) Toshiba Semiconductor – INFRARED LIGHT-EMISSION DIODE FOR STILL CAMERA LIGHT SOURCE FOR AUTO FOCUS

Optical And Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Forward voltage
Pulse forward voltage
Reverse current
Effective emission spot
diameter
Radiation flux
Half value angle
Peak emission wavelength
Spectral line half width
V_F
I_F = 50mA
V_FP
I_FP = 300mA, t = 10ms
I_R
V_R = 1V
X
Half value of peak
(Note 1)
Y
Half value of peak
(Note 1)
(Note)
φe
θ
1
2
λ_P
∆λ
I_FP = 300mA, t = 10ms
(Note 2)
I_F = 50mA
I_F = 50mA
I_F = 50mA
(Note1): The direction of X, Y are in the following diagram.
The shaded area represents the emitting surface.
Y
TLN212(F)
Min Typ. Max Unit
― 1.35 ―
V
―
1.67 1.85
V
―
― 100 µA
―
388
―
µm
―
296
―
8
12
― mW
―
±35
―
°
850 870 900 nm
―
40
―
nm
LED chip
X
(Note 2): Luminous radiation output effective angle = ±25 degree
Precaution
Please be careful of the followings.
1. Soldering temperature: 260°C max
Soldering time: 5s max
(Soldering must be performed 2mm from the bottom of the package.)
2. When forming the leads, bend each lead under the 2mm from the body of the device.
Soldering must be performed after the leads have been formed.
3. The TLN212(F) for a still camera AF use only. Please do not use this device except for a still camera.
2
2004-01-06