TIM1414-18L-252 Datasheet, PDF (3/4 Pages) Toshiba Semiconductor – MICROWAVE POWER GaAs FET

TIM1414-18L-252
RF PERFORMANCE
41.54
41.96
Output Power vs. Frequency
414.29⁴5⁴
41.57
43
VDS= 9V
IDSQ ≅ 4.4A
Pin= 36.5dBm
42
41
40
39
13.5 13.75 14 14.25 14.5 14.75 15
Frequency (GHz)
Output power vs. Input power
50
f=14.5GHz
45
VDS= 9V
IDSQ ≅ 4.4A
40
Po
35
30
25
20
Ids
15
10
15
20 25 30 35
Pin(dBm)
3
18
16
14
12
10
8
6
4
2
40