TIM1414-18L-252 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – MICROWAVE POWER GaAs FET

MICROWAVE SEMICONDUCTOR
TECHNICAL DATA
MICROWAVE POWER GaAs FET
TIM1414-18L-252
FEATURES
T HIGH POWER
T BROAD BAND INTERNALLY MATCHED FET
P1dB=42.0dBm at 13.75GHz to 14.5GHz
T HIGH GAIN
T HERMETICALLY SEALED PACKAGE
G1dB=6.0dB at 13.75GHz to 14.5GHz
T LOW INTERMODULATION DISTORTION
IM3(Min.)=−25dBc at Po=36dBm Single Carrier Level
RF PERFORMANCE SPECIFICATIONS ( Ta= 25_°C )
CHARACTERISTICS SYMBOL
CONDITION
UNIT
Output Power at 1dB Gain
Compression Point
Power Gain at 1dB Gain
Compression Point
P1dB
G1dB
VDS= 9V
IDSQ≅4.4A
f = 13.75 – 14.5GHz
dBm
dB
Drain Current
IDS1
A
Power Added Efficiency
ηadd
%
3rd Order Intermodulation
IM3
Two Tone Test
dBc
Distortion
Po= 36.0dBm
Drain Current
IDS2
(Single Carrier Level)
A
Channel Temperature Rise
∆Tch VDS X IDS X Rth(c-c) °C
ELECTRICAL CHARACTERISTICS ( Ta= 25_°C )
MIN.
41.5
5.0


-25


TYP. MAX.
42.0 
6.0 
5.5 6.0
24 

5.5 6.0
 100
CHARACTERISTICS
Transconductance
Pinch-off Voltage
Saturated Drain Current
Gate-Source Breakdown
Voltage
Thermal Resistance
SYMBOL
CONDITION
gm VDS= 3V
IDS= 4.8A
VGSoff VDS= 3V
IDS= 145mA
IDSS VDS= 3V
VGS= 0V
VGSO IGS= -145µA
Rth(c-c) Channel to Case
UNIT MIN. TYP. MAX.
mS  6000 
V -0.7 -1.6 -2.3
A
 10.0 
V
-5  
°^C/W  1.8 2.3
‹ The information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
Jan. 2004