TIM1414-18L-252 Datasheet, PDF (2/4 Pages) Toshiba Semiconductor – MICROWAVE POWER GaAs FET

TIM1414-18L-252
ABSOLUTE MAXIMUM RATINGS ( Ta= 25_°C )
CHARACTERISTICS
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Total Power Dissipation (Tc= 25 _°C)
Channel Temperature
Storage
SYMBOL
VDS
VGS
IDS
PT
Tch
Tstg
UNIT
V
V
A
W
°^C
°^C
PACKAGE OUTLINE (2-11C1B)
RATING
15
-5
11.5
60.0
175
-65 to +175
4-R3.0
?
@
Unit in mm
@
? Gate
@ Source
A Drain
A
0.6±0.15
17.0±0.3
21.5 MAX..
11.0 MAX.
HANDLING PRECAUTIONS FOR PACKAGE MODEL
Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C.
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