SSM6N42FE Datasheet, PDF (3/6 Pages) Toshiba Semiconductor – Field-Effect Transistor Silicon N-Channel MOS Type

Q1, Q2 Common
2000
I_D – V_DS
10 V 4 V 2.5 V
Common Source
Ta = 25°C
1.8 V
1.5 V
1000
VGS = 1.2 V
0
0
0.2
0.4
0.6
0.8
1.0
Drain–source voltage V_DS (V)
SSM6N42FE
10000
Common Source
VDS = 3 V
1000
I_D – V_GS
100
10
Ta = 100°C
−25°C
25°C
1
0.1
0
1
2
Gate–source voltage V_GS (V)
1000
R_{DS (ON)} – V_GS
Common Source
ID = 0.15 A
1000
R_{DS (ON)} – V_GS
Common Source
ID = 0.5 A
500
25°C
Ta = 100°C
−25°C
0
0
2
4
6
8
10
Gate–source voltage V_GS (V)
500
25°C
Ta = 100°C
−25°C
0
0
2
4
6
8
10
Gate–source voltage V_GS (V)
R_{DS (ON)} – I_D
1000
Common Source
Ta = 25°C
1000
R_{DS (ON)} – Ta
Common Source
500
VGS = 1.5 V
1.8 V
2.5 V
4.5 V
0
0
1000
2000
Drain current I_D (mA)
1.8 V, 0.25 A
500
VGS = 1.5 V, ID = 0.15 A
4.5 V, 0.5 A
2.5 V, 0.4 A
0
−50
0
50
100
150
Ambient temperature Ta (°C)
3
2009-10-13