SSM6N42FE Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Field-Effect Transistor Silicon N-Channel MOS Type

SSM6N42FE
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
SSM6N42FE
○ Power Management Switch Applications
○ High-Speed Switching Applications
• 1.5V drive
• N-ch 2-in-1
• Low ON-resistance : R_DS(ON) = 600 mΩ (max) (@V_GS = 1.5V)
: R_DS(ON) = 450 mΩ (max) (@V_GS = 1.8V)
: R_DS(ON) = 330 mΩ (max) (@V_GS = 2.5V)
: R_DS(ON) = 240 mΩ (max) (@V_GS = 4.5V)
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)
ES6
単位: mm
1.6±0.05
1.2±0.05
1
6
2
5
3
4
Characteristic
Symbol
Rating
Unit
Drain–source voltage
V_DSS
20
V
Gate–source voltage
V_GSS
± 10
V
Drain current
DC
I_D (Note 1)
800
mA
Pulse
I_DP (Note 1)
1600
1.Source1
2.Gate1
3.Drain2
4.Source2
5.Gate2
6.Drain1
Drain power dissipation
Channel temperature
Storage temperature
P_D (Note 2)
150
mW
T_ch
150
°C
JEDEC
―
T_stg
- 55 to 150
°C
JEITA
―
Note: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
2-2N1D
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
Weight: 3.0 mg (typ.)
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: The junction temperature should not exceed 150°C during use.
Note 2: Total rating
Mounted on an FR4 board
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.135 mm² × 6)
Marking
6
5
4
NN4
1
2
3
Equivalent Circuit (top view)
6
5
4
Q1
Q2
1
2
3
1
2009-10-13