SSM6N42FE Datasheet, PDF (2/6 Pages) Toshiba Semiconductor – Field-Effect Transistor Silicon N-Channel MOS Type

SSM6N42FE
Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common)
Characteristic
Drain-source breakdown voltage
Drain cutoff current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drain-source ON-resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Switching time
Turn-on time
Turn-off time
Drain-source forward voltage
Note 3: Pulse test
Symbol
Test Condition
Min
V _{(BR) DSS}
V _{(BR) DSX}
I_DSS
I_GSS
V_th
|Y_fs|
R_{DS (ON)}
C_iss
C_oss
C_rss
Q_g
Q_gs
Q_gd
t_on
t_off
V_DSF
I_D = 1 mA, V_GS = 0 V
I_D = 1 mA, V_GS = - 10 V
V_DS = 20 V, V_GS = 0 V
V_GS = ±8 V, V_DS = 0 V
V_DS = 3 V, I_D = 1 mA
V_DS = 3 V, I_D = 500 mA (Note 3)
I_D = 500 mA, V_GS = 4.5 V (Note 3)
I_D = 400 mA, V_GS = 2.5 V (Note 3)
I_D = 250 mA, V_GS = 1.8 V (Note 3)
I_D = 150 mA, V_GS = 1.5 V (Note 3)
V_DS = 10 V, V_GS = 0 V, f = 1 MHz
V_DS = 10 V, I_D = 0.8 A
V_GS = 4.5 V
V_DD = 10 V, I_D = 200 mA
V_GS = 0 to 2.5 V, R_G = 4.7 Ω
I_D = -0.8 A, V_GS = 0 V
(Note 3)
20
12
⎯
⎯
0.35
1.05
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Typ.
⎯
⎯
⎯
⎯
⎯
2.1
185
245
310
370
90
21
15
2.00
1.02
0.98
18
50
-0.84
Max Unit
⎯
V
⎯
1
μA
±1
μA
1.0
V
⎯
S
240
330
mΩ
450
600
⎯
⎯
pF
⎯
⎯
⎯
nC
⎯
⎯
ns
⎯
-1.2
V
Switching Time Test Circuit (Q1, Q2 Common)
(a) Test Circuit
2.5 V
入力
0
10 μs
(b) V_{IN 2.5 V}
V_DD = 10 V
出力 _{RG = 4.7 Ω}
Duty ^<= 1%
0V
V_IN: t_r, t_f < 5 ns
Common Source
(c) V_OUT
V_DD
Ta = 25°C
V_DD
V_{DS (ON)}
10%
90%
90%
10%
t_r
t_f
t_on
t_off
Notice on Usage
Let V_th be the voltage applied between gate and source that causes the drain current (I_D) to be low (1 mA for the
SSM6N42FE). Then, for normal switching operation, V_GS(on) must be higher than V_th, and V_GS(off) must be lower than
V_th. This relationship can be expressed as: V_GS(off) < V_th < V_GS(on).
Take this into consideration when using the device.
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is
protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that
come into direct contact with devices should be made of antistatic materials.
2
2009-10-13