RFM07U7X Datasheet, PDF (3/5 Pages) Toshiba Semiconductor – TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

f - Po, nD
10
100
Vds=7.2V
9 ^Pi=0.5W
90
Iidle=500mA
8
80
7
70
6
60
5
50
4
40
3
30
2
Po ²⁰
1
nD 10
0
0
440 450 460 470 480 490 500 510 520 530 540
FREQUENCY f (MHz)
Pi - Po
14
f =520MHz
13 _Iidle=500mA
12
11
10
9
8
7
6
5
4
3
2
1
0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
INPUT POWER Pi(W)
Vds=9.6V
Vds=7.2V
Vds=6.0V
0.8 0.9 1.0
10
f =520MHz
9 ^Vds=7.2V
Pi - Po
8
7
6
5
4
3
2
Iidle=700mA
Iidle=500mA
1
Iidle=300mA
0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
INPUT POWER Pi(W)
RFM07U7X
Vgs - Iidle
1.7
Vds=7.2V
1.6
1.5
1.4
1.3
1.2
1.1
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
GATE VOLTAGE Vgs(V)
80
f =520MHz
Iidle=500mA
70
Pi - nD
60
50
40
30
20
Vds=9.6V
10
Vds=7.2V
Vds=6.0V
0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
INPUT POWER Pi(W)
70
f =520MHz
Vds=7.2V
60
Pi - nD
50
40
30
20
Iidle=700mA
10
Iidle=500mA
Iidle=300mA
0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
INPUT POWER Pi(W)
3
2012-05-25