RFM07U7X Datasheet, PDF (2/5 Pages) Toshiba Semiconductor – TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

RFM07U7X
Electrical Characteristics (Ta = 25°C)
Characteristics
Drain cut-off current
Gate-source leakage current
Threshold voltage
Output power
Drain efficiency
Power gain
Load mismatch
Symbol
I_DSS
I_GSS
V_th
P_O
η_D
G_P
−
Test Condition
V_DS = 7.2 V, V_GS = 0 V
V_GS = 3 V
V_DS = 7.2 V, I_D = 2 mA
V_DS = 7.2 V,
I_idle = 500 mA (V_GS = adjust),
f = 520 MHz, P_i = 0.5 W,
Z_G = Z_L = 50 Ω
V_DS = 10 V,
P_O = 7 W (P_i = adjust),
I_idle = 500 mA (V_GS = adjust),
f = 520 MHz,
VSWR LOAD 20:1 all phase
Min Typ. Max Unit
−
−
10
μA
−
−
5
μA
0.4 0.9 1.4
V
7.0 8.2
−
W
58
68
−
%
11.5 12.5
−
dB
No degradation
−
Note 1: These characteristic values are measured using measurement tools specified by Toshiba.
Output Power Test Fixture
(Test Condition: f = 450 to 530 MHz, V_DS = 7.2 V, I_idle = 500 mA, P_i = 0.5 W)
C2 C9
P_i
Z_G = 50 Ω _C1
R1
C3
L2 C8
C4
C5
L1
C6 C7
P_O
Z_L = 50 Ω
C10
V_GS
C1: 10 pF
C2: 2200 pF
C3: 39 pF
C4: 20 pF
C5: 20 pF
C6: 10 pF
C7: 10 pF
C8: 2200 pF
C9: 2200 pF
C10: 47 μF
C11: 47 μF
C11
V_DS
L1: φ0.6 mm enamel wire, 5.0ID, 10T
L2: φ0.5 mm enamel wire, 2.5ID, 1.5T
R1: 1.5 kΩ
2
2012-05-25