RFM07U7X Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
RFM07U7X
RFM07U7X
VHF- and UHF-band Amplifier Applications
(Note)The TOSHIBA products listed in this document are intended for high
frequency Power Amplifier of telecommunications equipment. These
TOSHIBA products are neither intended nor warranted for any other use.
Do not use these TOSHIBA products listed in this document except for
high frequency Power Amplifier of telecommunications equipment.
Unit: mm
• Wide Band matching: f=450 to 530MHz
• Drain efficiency: η_D = 68% (typ.)
• Output power: P_O = 8.2 W (typ.)
• Gain: G_P = 12.5 dB (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Gate-source voltage
Drain current
Power dissipation
Channel temperature
Storage temperature range
V_DSS
V_GSS
I_D
P_D*
T_ch
T_stg
16
V
3
V
3
A
20
W
150
°C
−45 to 150
°C
JEDEC
JEITA
TOSHIBA
PW-X
-
-
2-5N1A
Note: Using continuously under heavy loads (e.g. the application of high
Weight: 0.08 g (typ.)
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*: Tc = 25°C (When mounted on a 1.6 mm glass epoxy PCB)
Marking
2
Type name
UH F
1
3
**
Dot
Lot No.
1. Gate
2. Source (heat sink)
3. Drain
Caution
Please take care to avoid generating static electricity when handling this transistor.
1
2012-05-25