2SC5949 Datasheet, PDF (3/4 Pages) Toshiba Semiconductor – Transistor Silicon NPN Triple Diffused Type

20
Common emitter
Tc = 25°C
I_C – V_CE
16
500
400
300
12
200
8
100
4
50
IB = 20 mA
0
0
2
4
6
8
10
12
Collector-emitter voltage V_CE (V)
2SC5949
16
Common emitter
VCE = 5 V
I_C– V_BE
12
8
Tc = 100°C
25
−25
4
0
0
0.5
1.0
1.5
2.0
2.5
Base-emitter voltage V_BE (V)
1000
500
Common emitter
VCE = 5 V
300
Tc = 100°C
100
25
50
30 ^−25
hFE – I_C
10
5
0.03
0.1
0.3
1
3
10
30
Collector current I_C (A)
V_{CE (sat)} – I_C
2
Common emitter
1 ^{IC / IB = 10 V}
0.5
0.3
Tc = 100°C
0.1
0.05
0.03
25
−25
0.01
0.03
0.1
0.3
1
3
10
30
Collector current I_C (A)
f_T– I_C
100
10
1
0.01
Common emitter
Tc = 25°C
VCE = 5 V
0.1
1
10
Collector current I_C (A)
Safe operating area
100
IC max (pulsed) *
10 ^{IC max (continuous)}
DC operation
Tc = 25°C
1 ms *
10 ms *
100 ms *
1
*:Single non-repetitive pulse
Tc = 25°C
Curves must be de-rated
linearly with increase in
temperature.
0.1
0.1
1
10
VCEO max
100
1000
Collector-emitter voltage V_CE (V)
3
2006-11-16